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| MITSUBISHI IGBT MODULES MG400V1US51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS MG400V1US51A FEATURE The electrodes are isolated from case. Enhancement-mode Integrates fault-signal output circuit in package. (Short-Circuit and Over-Current) UL Recognized Yellow Card No.E80276 File No.E80271 APPLICATION General purpose inverters, servo drives and motor controls OUTLINE DRAWING & EQUIVALENT CIRCUIT Dimensions in mm 4-6.50.3 1180.8 1040.6 G JAPAN C C SEN SEN 110.6 110.6 470.6 540.6 680.8 C E 4-M6 C E 3-M4 E E E E G Equivalent Circuit 260.6 440.6 100.6 8.50.6 25.5 -1 1160.8 Weight: 420g 22.5 -1 20 660.8 3.50.5 +2 +2.3 -1 +2 Dec.2005 MITSUBISHI IGBT MODULES MG400V1US51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS MAXIMUM RATINGS (Ta = 25C) Symbol VCES VGES VSES IC ICP IF IFM PC Tj Tstg Vlsol -- -- Parameter Collector-emitter voltage Gate-emitter voltage Sense-emitter voltage Collector DC current 1ms Forward DC current 1ms Collector power dissipation Junction temperature Storage temperature range Isolation voltage Screw Terminal (M4/M6) torque Mounting Conditions Ratings 1700 20 40 400 800 400 800 2750 150 -40 ~ 125 4000 (AC 1 minute) 2/3 3 Unit V V V A A W C C V N*m TC = 25C ELECTRICAL CHARACTERISTICS (Ta = 25C) Symbol IGES ICES VGE(off) VCE(sat) Cies td(on) tr ton td(off) tf toff VF trr ISES IC(SEN-START) VSEN Rth(j-c) Parameter Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Switching Turn-on time Turn-off delay time time Fall time Turn-off time Forward voltage Reverse recovery time Sense leakage current Sense Sense start current Sense voltage Thermal resistance Test conditions VGE = 20V, VCE = 0 VCE = 1700V, VGE = 0 IC = 400mA, VCE = 5V IC = 400A, Tj = 25C VCE = 10V, VGE = 0, f = 1MHz Inductive load VCC = 900V IC = 400A VGE = 15V RG = 2 IF = 400A, VGE = 0 IF = 400A, VGE = -15V, di/dt = 1500A/s VSEN - E = 40V, VCE = 0, VGE = 0 VGE = 15V, VSE = 14.8V VGE = 15V, IC = 2400A Transistor stage Diode stage Min. -- -- 4.0 -- -- -- -- -- -- -- -- -- -- -- 1050 -- -- -- Limits Typ. -- -- -- 3.2 51200 0.14 0.07 0.21 0.49 0.28 0.77 4.0 0.3 -- -- -- -- -- Max. 500 4.0 8.0 4.5 -- -- -- -- -- 1.0 -- 5.5 0.6 200 -- 13.2 0.045 0.125 Unit nA mA V V pF s (Note 1) (Note 1) (Note 2) (Note 2) V s nA A V C/W Dec.2005 MITSUBISHI IGBT MODULES MG400V1US51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Note 1: Switching time and reverse recovery time test circuit and timing chart Switching time test circuit Timing chart VGE 10% 90% RG -VGE IF VCC IC L Irr IC trr 90% Irr 20% Irr 90% RG 10% td(on) td(off) tf 10% Note 2: Sense start current and sense voltage test circuit Test circuit *Measurement in the complete charge period. Timing chart Complete charge period VGE IC Inductance 2400A IC(SEN-START) 15V 330 VSE IC VSE 14.8V 15V VSEN Dec.2005 MITSUBISHI IGBT MODULES MG400V1US51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Rank symbol 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 MIN. 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 MAX. 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 Rank symbol A B C D E MIN. 4.5 4.0 3.5 3.0 2.5 MAX. 5.5 4.7 4.2 3.7 3.2 VCE(sat), VF Rank JAPAN C E C E E Serial No. MG400V1US51 T52AA1 Lot No. G SEN 34C 000001 Dec.2005 MITSUBISHI IGBT MODULES MG400V1US51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS PERFORMANCE CURVES IC - VCE 800 COLLECTOR CURRENT IC (A) IC - VCE 800 COLLECTOR CURRENT IC (A) 15 20 12 10 20 12 15 10 600 600 400 9 400 9 VGE = 8V 200 Common emitter Tj = 125C 0 0 2 4 6 8 10 200 VGE = 8V Common emitter Tj = 25C 0 2 4 6 8 10 0 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) VCE - VGE COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) VCE - VGE 16 16 12 12 8 IC = 800A 4 Common emitter Tj = 25C 0 0 4 8 12 16 400 200 20 8 IC = 800A 4 Common emitter Tj = 125C 0 0 4 8 12 16 400 200 20 GATE-EMITTER VOLTAGE VGE (V) GATE-EMITTER VOLTAGE VGE (V) IC - VGE 800 COLLECTOR CURRENT IC (A) IF - VF 800 640 Tj = 125C FORWARD CURRENT IF (A) Common emitter VCE = 5V 25 Tj = 125C 600 25 480 400 320 160 200 Common cathode VGE = 0V 0 0 2 4 6 8 10 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VGE (V) FORWARD VOLTAGE VF (V) Dec.2005 MITSUBISHI IGBT MODULES MG400V1US51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS SW time - RG 104 7 5 3 2 7 5 3 ton 2 td(on) 7 5 3 2 7 5 3 2 SW time - IC 103 7 5 3 2 toff tf td(off) td(on) ton SWITCHING TIME (ns) 103 td(off) tr tf SWITCHING TIME (ns) toff 102 7 5 3 2 102 101 100 Common emitter VCC = 900V IC = 400A VGE = 15V Tj = 25C Tj = 125C 0 4 8 12 tr 101 7 5 3 2 16 100 Common emitter VCC = 900V RG = 2 VGE = 15V Tj = 25C Tj = 125C 200 300 400 0 100 GATE RESISTANCE RG () COLLECTOR CURRENT IC (A) SW loss - RG 103 102 Eon SW loss - IC SWITCHING LOSS Eon, Eoff (mJ) SWITCHING LOSS Eon, Eoff (mJ) 7 5 3 2 7 5 3 2 Eoff 102 7 5 3 2 Eon 101 7 5 3 2 Eoff Common emitter VCC = 900V IC = 400A VGE = 15V Tj = 25C Tj = 125C 0 4 8 12 16 101 7 5 3 2 100 100 Common emitter VCC = 900V RG = 2 VGE = 15V Tj = 25C Tj = 125C 0 100 200 300 400 GATE RESISTANCE RG () COLLECTOR CURRENT IC (A) PEAK REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) 103 7 5 3 2 PEAK REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) Irr, trr - RG Irr, trr - IF 103 7 5 3 2 Irr Irr 102 7 5 3 2 102 7 5 3 2 trr 101 Common emitter VCC = 900V IC = 400A VGE = 15V Tj = 25C Tj = 125C 8 12 16 trr 0 4 101 Common emitter VCC = 900V RG = 2 VGE = 15V Tj = 25C Tj = 125C 200 300 400 0 100 GATE RESISTANCE RG () FORWARD CURRENT IF (A) Dec.2005 MITSUBISHI IGBT MODULES MG400V1US51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Edsw - RG REVERSE RECOVERY LOSS Edsw (mJ) REVERSE RECOVERY LOSS Edsw (mJ) Edsw - IF 102 7 5 3 2 102 7 5 3 2 101 7 5 3 2 101 7 5 3 2 100 Common emitter VCC = 900V IC = 400A VGE = 15V Tj = 25C Tj = 125C 0 4 8 12 16 100 Common emitter VCC = 900V RG = 2 VGE = 15V Tj = 25C Tj = 125C 0 100 200 300 400 GATE RESISTANCE RG () FORWARD CURRENT IF (A) VCE, VGE - QG COLLECTOR-EMITTER VOLTAGE VCE (V) C - VCE 20 GATE-EMITTER VOLTAGE VGE (V) 1000 105 7 5 Cies VCE =0V 600 900 12 CAPACITANCE C (pF) 800 16 3 2 104 7 5 3 2 Coes 400 300 8 600 Common emitter 4 RL = 2.25 Tj = 25C 0 1500 2000 2500 103 7 5 3 2 Cres VGE = 0V f = 1MHz TC = 25C 2 3 5 7 101 2 3 5 7 102 200 0 0 500 1000 102 0 10 CHARGE QG (nC) COLLECTOR-EMITTER VOLTAGE VCE (V) Rth - tW 100 TRANSIENT THERMAL RESISTANCE Rth(j-c) (C/W) 7 TC = 25C 5 3 2 7 5 3 2 DIODE STAGE 10-1 10-2 7 5 3 2 TRANSISTOR STAGE 10-3 -3 10 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 PULSE WIDTH tW (s) Dec.2005 |
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